LOW-TEMPERATURE CONDUCTANCE OF NANOSYSTEMS UNDER CONDITIONS OF WEAK COUPLING WITH A MICROWAVE GENERATOR

A. S. Jaroshevich,V. A. Tkachenko,Z. D. Kvon, N. S. Kuzmin,O. A. Tkachenko,D. G. Baksheev,I. V. Marchishin,A. K. Bakarov,E. E. Rodyakina,V. A. Antonov,V. P. Popov,A. V. Latyshev

Optoelectronics, Instrumentation and Data Processing（2025）

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field-effect transistor,silicon-on-insulator,two-dimensional electron gas (2DEG),short constriction,GaAs/AlGaAs heterostructures,mesoscopic transport,microwave photoconductance,dynamic chemical potential,coaxial cables,edge capacitance

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