Dissociation of 1/3 <10(1)Over-Bar1> Misfit Dislocation at the Interface of Α-Ga2o3 Thin Film Deposited on M-Plane Sapphire
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING（2024）
关键词
Gallium oxides,Misfit dislocation,Threading dislocation,HAADF-STEM
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