An Extensive Negative Gate Bias Stress Degradation Mechanism in GaN MIS-HEMTs for Aerospace Applications
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Silicon,Stress,Logic gates,Temperature distribution,Threshold voltage,Wide band gap semiconductors,HEMTs,Cryogenic temperature,impact ionization,negative gate bias stress (NGBS),Silvaco TCAD simulation,thermal emission
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