On the Extreme Scaling of Transistors with Monolayer MOS2 Channel

Wen-Chia Wu,Terry Y. T. Hung,D. Mahaveer Sathaiya,Edward Chen,Chen-Feng Hsu, Walker Yun,Hsiang-Chi Hu,Bo-Heng Liu,T. Y. Lee,Chi-Chung Kei,Wen-Hao Chang,Jin Cai, W. Jeff,Chung-Cheng Wu,H.-S. Philip Wong,Chao-Hsin Chien,Chao-Ching Cheng,Iuliana P. Radu

Symposium on VLSI Technology（2024）

Cited 1|Views8

Key words

Monolayer MoS2 Channel,Length Scale,Contact Resistance,Channel Length,Transition Metal Dichalcogenides,Subthreshold Swing,Contact Length,2D Transition Metal Dichalcogenides,Thermal Budget,Device Length,Monolayer Transition Metal Dichalcogenides,Gate Stack

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