Photon-Mediated Charge Transport and Stability of Physically-Defined and Self-Organized Germanium Quantum Dots/SON Barriers in Few-Hole Regime at $\mathrm{t} > 10\ \Mathrm{k}$
Symposium on VLSI Technology（2024）
Abstract
We report, for the first time, photon-mediated charge transport through physically-defined Ge double quantum-dots (DQDs)/Si barrier and QD/Si 3 N 4 single-hole transistor in few-hole regime for high-fidelity qubit operation at $T > 10\ \mathrm{K}$ . Engineering strengths of size-tunable QDs, self-organized barriers, and self-aligned reservoirs enable controllable tunability of charging energy, level spacing and coupling energy of Ge DQDs by adjusting QD size and barrier width/potential. Hard-wall confinement and photon enhanced carrier transport are facilitated to resolve charge states of DQDs, improve tunneling current properties of SHTs with high peak-to-valley ratio (∼2000), low leakage (∼5 fA), large addition energy (∼50 meV), low $1/f$ noise (∼10 −26 A 2 /Hz), and achieve DQD-SHT readout fidelity of 99.92% at $T > 10\ \mathrm{K}$ .
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Key words
Germanium,Quantum Dots,SHTs,Few-hole,Fidelity
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