Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform C-Axis Alignment, Record High Breakdown Field (~10nm HZO), and Record Final 2pr of 56 Μc/cm2 with Endurance > 4E12
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2024）
Key words
Breakdown Field,C-axis Alignment,Atomic Force Microscopy,Uniform Field,Local Extrema,Uniform Electric Field,Weak Electric Field,Crystallinity,Electric Field Strength,Ferroelectric,Superlattice,High Uniformity,Surfactin,Electrical Stress,TCAD Simulation
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