High-Performance Ultrathin Body C-Sige Channel FDSOI Pmosfets Featuring SiGe Source and Drain: $v_{\rm Th}$ Tuning, Variability, Access Resistance, and Mobility Issues

A. Villalon,C. Le Royer,S. Cristoloveanu,M. Cassé,D. Cooper, J. Mazurier, B. Previtali,C. Tabone, P. Perreau, J. Hartmann,P. Scheiblin,F. Allain, F. Andrieu, O. Weber, O. Faynot

IEEE Transactions on Electron Devices（2013）

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