Simulation and Fabrication of Monolithic III–V Photodetectors on Si: the Role of Growth Facets and Localization of Heterojunctions
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Silicon,Photonics,Performance evaluation,Indium phosphide,III-V semiconductor materials,Substrates,Optical device fabrication,III-V,fabrication,nanoelectronics,nanowires (NWs),optoelectronics,photodetectors (PDs),simulations,technology computer-aided design (TCAD),template-assisted selective epitaxy (TASE)
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要