Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes with SiO$_{\text{2}}$ Passivation Layer under On-State Stress Bias

Ya-Xun Lin,Der-Sheng Chao,Jenq-Horng Liang,Yao-Luen Shen,Chih-Fang Huang,Steve Hall,Ivona Z. Mitrovic

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

引用 0|浏览2

关键词

Stress,Passivation,Reliability,Degradation,Gallium nitride,Wide band gap semiconductors,Schottky diodes,GaN on Si,ON-state stress,quasivertical Schottky barrier diodes (SBDs)

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要