A <5 Db NF, > 17 Dbm OP1 Db F-Band GaN-on-SiC HEMT LNA with a Monolithic Substrate-Integrated Waveguide Filter
2024 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, IMS 2024（2024）
Key words
Bandpass filter (BPF),gallium nitride (GaN),high-electron-mobility transistors (HEMTs),low-noise amplifiers (LNAs),millimeter wave (mmW),monolithic microwave integrated circuits (MMICs),substrate-integrated waveguide (SIW)
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