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Plasma-Enhanced Atomic Layer Deposition Based Ferroelectric Field-Effect Transistors

Chinsung Park,Prasanna Venkat Ravindran,Dipjyoti Das,Priyankka Gundlapudi Ravikumar,Chengyang Zhang,Nashrah Afroze, Lance Fernandes, Yu Hsin Kuo,Jae Hur,Hang Chen,Mengkun Tian,Winston Chern,Shimeng Yu,Asif Islam Khan

IEEE Journal of the Electron Devices Society（2024）

引用 0|浏览9
关键词
FEFET,memory window,thermal atomic layer deposition,plasma-enhanced atomic layer deposition
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