Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation Fmax = 20.4 GHz
Device Research Conference（2024）
关键词
Silicon Carbide,Maximum Oscillation Frequency,Sapphire Substrate,Doping Process,High-power Devices,Metal Organic Chemical Vapor Deposition,Active Area Of The Device
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