Electrical Stability of MOS Structures with AlON and Al$_{\text{2}}$O$_{\text{3}}$ Dielectrics Deposited on N-and P-Type GaN

Walter Goncalez Filho,Matteo Borga,Karen Geens,Md Arif Khan,Deepthi Cingu,Urmimala Chatterjee,Stefaan Decoutere,Werner Knaepen, Seda Kizir, Panagiota Arnou,Benoit Bakeroot

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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关键词

Dielectrics,Capacitors,Logic gates,Semiconductor device measurement,Threshold voltage,Stability criteria,Electrons,AlON,GaN power devices,threshold voltage stability

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