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CMOS-compatible Hf0.5Zr0.5O2-based Ferroelectric Memory Crosspoints Fabricated with Damascene Process

Dorian Coffineau, Nicolas Gariepy,Benoit Manchon,Raphael Dawant,Abdelatif Jaouad,Etienne Grondin,Serge Ecoffey,Fabien Alibart,Yann Beilliard, Andreas Ruediger,Dominique Drouin

Nanotechnology（2024）

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Key words
BEOL compatible,damascene,ferroelectrics,Hf0.5Zr0.5O2
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