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Investigation of Silicon Nitride for Spacer Via Plasma-Enhanced Atomic Layer Deposition Using a (Tert-Butylamino)dimethylsilane Precursor

Chae-Yeon Park,Hae Lin Yang,Hye-Mi Kim, Daejung Kim,Yongjoo Park, Jongruyl Park,Seokhee Shin,Jin-Seong Park

Applied Surface Science（2024）

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Key words
Silicon nitride,Gate spacer,Plasma -enhanced atomic layer deposition,(PEALD),(Tert-butylamino)dimethylsilane (TBADMS),Substrate temperature
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