Vertical Leakage and Back-Gating Characteristics of GaN HEMTs Based on GaN/AlN Epitaxy on Off-Axis Conducting 4H-Sic
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024（2024）
关键词
GaN-on-SiC,hybrid power devices,vertical leakage,back-gating effects
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