準安定接触トレンチ合金Si:P及びGe:III族金属を用いたFinFET性能【Powered by NICT】

Oleg Gluschenkov,Zuoguang Liu,Hiroaki Niimi,Shogo Mochizuki, Jody A. Fronheiser, Xin Miao, J. Li, James J. Demarest, Chen Zhang, C. Niu, B. Liu, A. Petrescu,Praneet Adusumilli, Jie Yang,Hemanth Jagannathan, H. Bu, T. Yamashita

semanticscholar（2016）

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