A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High $\textit{I}_{\text{ON}}$ / $\textit{I}_{\text{OFF}}$ Ratio
IEEE Transactions on Electron Devices（2024）
Key words
Breakdown voltage,hysteresis effect,interface state,p-channel MESFET,tungsten-gated
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