Breakdown Characteristics Analysis of Kv-Class Vertical GaN PIN Rectifiers by Wafer-Level Sub-Bandgap Photoluminescence MappingZhiyu Xu, Matthias A. Daeumer,Minkyu Cho,Jae-Hyuck Yoo,Theeradetch Detchprohm,Marzieh Bakhtiary-Noodeh,Qinghui Shao,Ted A. Laurence,Daryl Key,Edward Letts,Tadao Hashimoto,Russell D. Dupuis,Shyh-Chiang ShenJournal of Applied Physics（2024）引用 1|浏览19AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
