High Frequency Pulsed Laser Driver Using Complementary GaN HEMTs
IEEE TRANSACTIONS ON POWER ELECTRONICS（2025）
Key words
Gallium nitride (GaN) high electron mobility transistor (HEMT),half-bridge,high frequency,high-side drive,pulse laser driver,Gallium nitride (GaN) high electron mobility transistor (HEMT),half-bridge,high frequency,high-side drive,pulse laser driver
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