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Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Zaoyang Lin,Xiangyu Wu,Daire Cott,Yuanyuan Shi,Henry Medina Silva,Stefanie Sergeant,Thierry Conard,Johan Meersschaut,Ankit Nalin Mehta,Benjamin Groven,Pierre Morin,Inge Asselberghs,Cesar Javier Lockhart de la Rosa,Gouri Sankar Kar,Dennis Lin,Annelies Delabie

ACS Applied Electronic Materials（2024）

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关键词
molybdenum disulfide (MoS2),tungsten disulfide(WS2),atomic layer deposition (ALD),gadolinium aluminate,high-kappa dielectrics,field-effect transistor
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