Hyper-doping of Silicon for Plasmonics in the Telecommunication Range

We investigate hyper-doping, a promising approach to introduce a highconcentration of impurities into silicon beyond its solid solubility limit, forits potential applications in near-infrared plasmonics. We systematicallyexplore the incorporation of dopants into silicon using ion implantation andpulsed laser melting annealing processes. Reflectance spectra analysis shows anachievable plasma wavelength of around 1.5 μm for dopant concentrationsexceeding 4 at.are extracted, revealing their potential for near-infrared plasmonicapplications. Moreover, we propose a fabrication process that allows for thecreation of hyper-doped silicon nanoparticles without the need for additionalmasking steps. Our research paves the way for designing CMOS-compatibleplasmonic nanostructures operating in the telecommunication wavelength range.The study's findings offer significant insights into the utilization ofhyper-doped silicon for advanced photonic and optoelectronic applications.