Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current

Chunsheng Guo, Shaoxiong Cui,Yumeng Li, Bojun Yao,Yamin Zhang,Hui Zhu,Meng Zhang,Shiwei Feng

IEEE Transactions on Power Electronics（2024）

Cited 0|Views16

Key words

MOSFET,Silicon carbide,Logic gates,Filling,Electron traps,Transient analysis,Threshold voltage,Reliability,threshold voltage,transient current method,trap characterization

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