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Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND Applications

Dipjyoti Das, Hyeonwoo Park, Zekai Wang,Chengyang Zhang,Prasanna Venkatesan Rayindran,Chinsung Park,Nashrah Afroze,Po-Kai Hsu,Mengkun Tian,Hang Chen, Winston Chem,Suhwan Lim,Kwangsoo Kim,Kijoon Kim,Wanki Kim,Daewon Ha,Shimeng Yu,Suman Dutta,Asif Khan

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024（2024）

Cited 4|Views30
Key words
FEFET,TDL,NAND,MW
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