Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY（2024）
关键词
BTI,compact model,contact effects,DRAM,independent dual gate a-IGZO-FET,disorder semiconductor,hopping,transfer-line method
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要