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Device and Material Investigations of GaN Enhancement-Mode Transistors for Venus and Harsh Environments

Qingyun Xie,John Niroula,Nitul S. Rajput,Mengyang Yuan,Shisong Luo,Kai Fu, Mohamed Fadil Isamotu, Rafid Hassan Palash,Bejoy Sikder,Savannah R. Eisner,Harshad Surdi, Aidan J. Belanger, Patrick K. Darmawi-Iskandar,Zlatan Aksamija,Robert J. Nemanich,Stephen M. Goodnick,Debbie G. Senesky,Gary W. Hunter,Nadim Chowdhury,Yuji Zhao,Tomas Palacios

APPLIED PHYSICS LETTERS（2024）

Cited 2|Views76
Key words
GaN Power Devices,High-Temperature Electronics,AlGaN/GaN HEMTs,Transparent Conductors,GaN
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