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Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays

Mikhail Fedotov, Viktor Korotitsky,Sergei Koveshnikov

Nanomaterials(2024)

Cited 0|Views4
Key words
analog neural networks,crossbar,dielectric layers,memristor circuits,resistive RAM,selectors
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