3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS2 Electrode for High‐Density Neuromorphic Systems
ADVANCED FUNCTIONAL MATERIALS（2024）
Key words
3D structure,atmospheric-pressure plasma-enhanced chemical vapor deposition,electrochemical random-access memory,ion-barrier,synapse device,vertical-sensing,WS2
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