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Test-beam Performance of Proton-Irradiated, Large-Scale Depleted Monolithic Active Pixel Sensors in 150 Nm CMOS Technology

Proceedings of The 32nd International Workshop on Vertex Detectors — PoS(VERTEX2023)(2024)

Shanghai Zhangjiang Laboratory

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Abstract
The increasing availability of high-resistivity substrates and large biasing voltage capabilities in commercial CMOS processes encourage the use of depleted monolithic activate pixel sensors (DMAPS) in high-energy physics experiments. LF-Monopix2 is the latest iteration of a DMAPS development line designed in $150\,\mathrm{nm}$ LFoundry technology, which features a large scale $(1×2)\,\mathrm{cm}^2$ chip size divided into $(56 × 340)$ pixels with a pitch of $(150 × 50)\,\mathrm{µm}^2$ . Implementation of the full pixel electronic circuitry within a large charge collection node compromises the sensor's noise and power budget while assuring short drift distances and a homogeneous electric field in the sensing part of the detector that increase the radiation hardness. Laboratory characterization and beam test performance of $100\,\mathrm{µm}$ thick LF-Monopix2 sensors with backside processing and irradiated to $1 × 10^{15}\,\mathrm{n}_\mathrm{eq}\,\mathrm{cm}^{−2}$ of NIEL fluence are presented.
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