BEOL Compatible Ultra-Thin ITO Transistor with Performance Recoverable Capability by in Situ Electrothermal Annealing
IEEE ELECTRON DEVICE LETTERS（2024）
Key words
Transistors,Indium tin oxide,Logic gates,Degradation,Coatings,Annealing,Aluminum oxide,Amorphous oxide semiconductor,oxygen vacancy engineering,performance recoverable capability,electrothermal annealing
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