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    • Surface Passivation Toward Multiple Inherent Dangling Bonds in Indium Phosphide Quantum Dots.

    Zhe Sun, Qinggang Hou, Jiahua Kong, Keke Wang,Ruiling Zhang,Feng Liu,Jiajia Ning,Jianguo Tang,Zhonglin Du

    Inorganic Chemistry（2024）

    Qingdao Univ

    Cited 1|Views22
    Abstract
    Indium phosphide (InP) quantum dots (QDs) have become the most recognized prospect to be less-toxic surrogates for Cd-based optoelectronic systems. Due to the particularly dangling bonds (DBs) and the undesirable oxides, the photoluminescence performance and stability of InP QDs remain to be improved. Previous investigations largely focus on eliminating P-DBs and resultant surface oxidation states; however, little attention has been paid to the adverse effects of the surface In-DBs on InP QDs. This work demonstrates a facile one-step surface peeling and passivation treatment method for both In- and P-DBs for InP QDs. Meanwhile, the surface treatment may also effectively support the encapsulation of the ZnSe shell. Finally, the generated InP/ZnSe QDs display a narrower full width at half-maximum (fwhm) of similar to 48 nm, higher photoluminescence quantum yields (PLQYs) of similar to 70%, and superior stability. This work enlarges the surface chemistry engineering consideration of InP QDs and considerably promotes the development of efficient and stable optoelectronic devices.
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