15.7 A 32mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10kcycle Write Endurance and a 10-Year Retention at 105°C

Yi-Cheng Huang,Shang-Hsuan Liu,Hsu-Shun Chen,Hsin-Chang Feng,Chih-Feng Li,Chou-Ying Yang,Wei-Keng Chang,Chang-Feng Yang,Chun-Yu Wu,Yen-Cheng Lin,Tsung-Tse Yang,Chih-Yang Chang,Wen-Ting Chu,Harry Chuang,Yih Wang,Yu-Der Chih,Tsung-Yung Jonathan Chang

IEEE International Solid-State Circuits Conference（2024）

引用 6|浏览39

关键词

Resistive Random Access Memory,FinFET Technology,10-year Retention,Promising Candidate,Current Limitations,Design Solutions,Edge Computing,Non-volatile Memory,Data Retention,Read Operation,Low-power Devices,Time-consuming Operations,Charge Pump,Word Line,Current Mirror,Dual Path,Sense Amplifier

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