Molecular Beam Epitaxy of Β-(In X Ga1-x )2O3 on Β-Ga2o3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement
ACS Applied Materials & Interfaces（2024）
关键词
beta-Ga2O3 alloys,oxides semiconductorepitaxy,structural defects,compositional control,multilayer structure
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