Design Technology Co-Optimization for the DRAM Cell Structure with Contact Resistance Variation
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Contact resistance,design technology co-optimization (DTCO),dynamic random access memory (DRAM),nonequilibrium Green’s function (NEGF),retention time (tRET),row hammer effect,technology computer-aided design (TCAD),trap-assisted tunneling (TAT) leakage,variability,write recovery time (tWR)
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined