Strain-Compensated Type-II $\text{GaAs}_{1-x}\text{Bi}_{x}/\text{GaN}_{y}\text{As}_{1-y}$ “W” Quantum Wells for GaAs-Based Telecom Lasers
2022 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)（2022）
关键词
Quantum Wells,Non-radiative Recombination,Band Offset,Auger Recombination,Layer Thickness,Band Gap,Band Structure,Result Of Reduction,Energy Reduction,Carrier Density,Large Band Gap,Central Layer,Bandgap Reduction,Material Gain,Atomic Calculations,Optical Gain,Gain Spectrum
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