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TCAD Modeling and Simulation of Self-Limiting Oxide Growth and Boron Segregation During Vertical Silicon Nanowire Processing

Materials Science in Semiconductor Processing(2024)

Cited 0|Views6
Key words
TCAD process simulations,Self-limiting thermal oxidation,Boron segregation,Silicon nanowires,Gate-all-around nanowire field-effect transistor (GAA-NW-FET)
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