Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels
IEEE Transactions on Electron Devices（2024）
关键词
Chemical vapor deposition,complementary FET (CFET),GeSi,GeSn,heterogeneous channels,high- kappa gate stacks,monolithic 3-D,nanosheets,transistor stacking,wet etching
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