Highly Manufacturable, Cost-Effective, and Monolithically Stackable 4F2 Single-Gated IGZO Vertical Channel Transistor (VCT) for Sub-10Nm DRAM

Daewon Ha,Wonsok Lee,M.H. Cho, M. Terai, S.-W. Yoo, H. Kim, Y. Lee,S. Uhm,M. Ryu,C. Sung,Y. Song, K. Lee,S.W. Park, K.-S. Lee, Y.S. Tak,E. Hwang, J. Chae, C. Im,S. Byeon, M. Hong,K. Sim, W.J. Jung,H. Ryu, M.J. Hong,S. Park, J. Park, Y. Choi, S. Lee,G. Woo, J. Lee, D.S. Kim,B.J. Kuh,Yu Gyun Shin,Jaihyuk Song

2023 International Electron Devices Meeting (IEDM)（2023）

Cited 5|Views21

Key words

Vertical Channel,Transistor Channel,Vertical Transistors,Advanced Processes,Low Power Consumption,Gate Dielectric,Subthreshold Swing,Planar Devices,Energy-dispersive X-ray Spectroscopy,Voltage-gated,Dry Etching,Channel Material,Higher Ion,Interface Trap,Channel Thickness,TCAD Simulation,Si Devices,Gate Stack

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