Intercalated Graphene As Next Generation Back-end-of-Line Conductors

S. W. Li, Y. C. Chan, C. H. Hsu,S. Y. Yang,K. Y. Liao, C. H. Ho, C. Y. Chen, H. P. Chen, M. H. Lee,B. Magyari-Köpe,W. S. Yun,T. Y. Lee, I. Radu, J. Z. Huang,C. I. Wu, Winston Shue, Min Cao

2023 International Electron Devices Meeting (IEDM)（2023）

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Key words

Contact Resistance,Specific Resistance,Resistance Of Film,Graphene Nanoribbons,Chemical Vapor Deposition,Work Function,Carrier Concentration,Graphene Layers,Interlayer Distance,Dirac Point,Pristine Graphene,Increase In Carrier Concentration,Fermi Level Shift,Edge Contact,Low Carrier Concentration

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