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High-Performance Gate-all-around Junctionless Vertical-Channel Transistors with the Ultra-low Sub-threshold Swing for Next-generation 4F2 DRAM

Abraham Yoo, Yi Jiang,Yunsong Qiu,Yuhong Zheng, Chen Yang, Daohuan Feng,Yucheng Liao,Xiangbo Kong,Jianfeng Xiao,Dongsheng Xie,Jinying Liu,Jian Chu,Di Ma, Minrui Hu,Wenli Zhao,Guangsu Shao,Chao Lin,Kai Shao, Yan Wang,Handong Xu,Zelun Li, Kuoming Huang,Xingkun Xue,Tingting Gu,Kang You, Xiang Liu,Jong Sung Jeon,Shufang Si,Yanzhe Tang,Mingde Liu, Yadong Guo, Jintao Chen,Mingtang Zhang,Xinwen Jin, GJ Yang,DH Han,Ted Park,Deyuan Xiao,Chao Zhao,Kanyu Cao

2023 International Electron Devices Meeting (IEDM)（2023）

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Key words
Vertical channel transistor,Junction-less transistor,Gate-all-around,4F2 DRAM,Hexagonal capacitor
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