High-Endurance MoS2 FeFET with Operating Voltage Fess Than IV for Envm in Scaled CMOS Technologies
2023 International Electron Devices Meeting (IEDM)（2023）
Key words
Open Voltage,CMOS Technology,Ferroelectric Field-effect Transistor,Scaled CMOS Technologies,Technological Advances,Transition Metal Dichalcogenides,Atomic Layer Deposition,Monolayer MoS2,Memory Window,X-ray Photoelectron Spectroscopy,I-V Curves,Forward Error Correction,X-ray Absorption Spectroscopy,Non-volatile Memory,Switching Voltage,Gate Bias,X-ray Reflectivity,Subthreshold Swing,High Endurance,Ferroelectric Layer,Ferroelectric Memory,Gate Stack,Sense Amplifier,Word Line
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