EUVパターン形成と二重歪高移動度チャンネルを特徴とする7nm FinFET技術【Powered by NICT】
R Xie,P Montanini,K Akarvardar,N Tripathi,B Haran, S Johnson,T Hook,B Hamieh,D Corliss, J Wang,X Miao, J Sporre,J Fronheiser,N Loubet,M Sung,S Sieg,S Mochizuki,C Prindle,S Seo,A Greene,J Shearer,A Labonte,S Fan,L Liebmann,R Chao,A Arceo,K Chung,K Cheon,P Adusumilli,H P Amanapu,Z Bi,J Cha, Chen H.-C.,R Conti,R Galatage,O Gluschenkov,V Kamineni, K Kim, C Lee,F Lie, Z Liu,S Mehta, Elias Miller,H Niimi,C Niu, C Park,D Park,M Raymond,B Sahu,M Sankarapandian,S Siddiqui,R Southwick, L Sun,C Surisetty,S Tsai,S Whang, Peijie Xu, Yuxuan Xu,C Yeh,P Zeitzoff, J Zhang, J Li,J Demarest,J Arnold,D Canaperi,D Dunn,N Felix,D Gupta,H Jagannathan,S Kanakasabapathy,W Kleemeier,C Labelle,M Mottura,P Oldiges,S Skordas,T Standaert, T Yamashita,M Colburn,M Na,V Paruchuri,S Lian,R Divakaruni, T Gow, S Lee,A Knorr,H Bu,M Khare IEEE Conference Proceedings（2016）
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