GaN Super-Heterojunction FETs with 10-Kv Blocking and 3-Kv Dynamic Switching
IEEE TRANSACTIONS ON ELECTRON DEVICES(2024)
关键词
Logic gates,HEMTs,Switches,Silicon,MODFETs,Epitaxial growth,Fabrication,Current collapse,dynamic ON-resistance,gallium nitride,MOFETs,power semiconductor switches,super-heterojunction (SHJ)
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