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A 4ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3

IEEE JOURNAL OF SOLID-STATE CIRCUITS(2024)

Cited 0|Views17
Key words
Active inductors,Bandwidth,Noise,Voltage,Capacitors,Transistors,Impedance,Active inductor design,flipped voltage follower (FVF) structure,low-dropout (LDO) regulator,self-adaptive bias circuitry,two-step technique for overshoot management
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