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Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

Zhouhang Jiang,Zixiang Guo,Xuyi Luo, Munazza Sayed,Zubair Faris,Halid Mulaosmanovic,Stefan Duenkel,Steven Soss,Sven Beyer,Xiao Gong,Santosh Kurinec,Vijaykrishnan Narayanan,Hussam Amrouch,En Xia Zhang,Daniel M. Fleetwood,Ronald D. Schrimpf,Kai Ni

IEEE ELECTRON DEVICE LETTERS（2024）

Cited 1|Views33
Key words
Non-Volatile Memory
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