Sensitivity Investigation of 100-Mev Proton Irradiation to SiGe HBT Single Event Effect
CHINESE PHYSICS B（2024）
Key words
silicon-germanium heterojunction bipolar transistor (SiGe HBT),100-MeV proton,technology computer-aided design (TCAD),single event effect (SEE),61.72.uf,61.80.Ed,61.80.-x,61.80.Jh
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