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Model-free Measurement of Lateral Recess in Gate-All-around Transistors with Micro Hard-X-ray Fluorescence

Janusz Bogdanowicz,Yusuke Oniki,Karine Kenis,Pallavi Puttarame Gowda,Hans Mertens, Basel Shamieh, Yonatan Leon,Matthew Wormington, Juliette Van der Meer,Anne-Laure Charley

JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3（2023）

引用 4|浏览16
关键词
X-ray fluorescence,gate all around transistors,nanosheet,cavity etch,lateral recess,critical dimension,inline metrology
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