Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE（2024）
Key words
AlGaN/GaN HEMT reliability,border trap density,interface trap density,load-pull analysis,pulsed I-V
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