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Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions.

Zhenzhen Kong,Yanpeng Song,Hailing Wang, Xiaomeng Liu, Xiangsheng Wang,Jinbiao Liu,Ben Li,Jiale Su, Xinguang Tan, Qingjie Luan,Hongxiao Lin,Yuhui Ren,Yiwen Zhang,Jingxiong Liu,Junfeng Li,Anyan Du,Henry H. Radamson,Chao Zhao,Tianchun Ye,Guilei Wang

ACS APPLIED MATERIALS & INTERFACES（2023）

Cited 2|Views23
Key words
SiGe/Si multilayer,interface,gate-all-around(GAA) field-effect transistors (FETs),RPCVD,epitaxy
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