Sequential Design of PEALD In–Ga–Zn–O Active Layer for Enhancing TFT Stability
IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）
Key words
Films,Zinc oxide,II-VI semiconductor materials,Thin film transistors,Stress,Metals,Semiconductor device measurement,Indium-gallium-zinc oxide (IGZO),oxide semiconductor,plasma-enhanced atomic layer deposition (PEALD),sequential design
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